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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

机译：多次扫描进行非熔融激光退火后，预非晶硅中超浅硼注入的失活

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Sharp, JA; Cowern, NEB; Webb, RP; Kirkby, KJ; Giubertoni, D; Gennaro, S; Bersani, M; Foad, MA; Cristiano, F; Fazzini, PF;
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年度 2006
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1. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans [J] . J. A. Sharp, N. E. B. Cowern, R. P. Webb, Applied Physics Letters . 2006,第19期

机译：多次扫描进行非熔融激光退火后，预非晶硅中超浅硼注入的失活
2. Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation [J] . Chyiu Hyia Poon, Alex See, Yunling Tan, Journal of Applied Physics . 2008,第8期

机译：碳共注入对非熔融激光退火后硼的失活和扩散的抑制
3. Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation [J] . Chyiu Hyia Poon, Byung Jin Cho, Yong Feng Lu, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第2期

机译：预非晶硅的多脉冲激光退火以形成超浅硼结
4. Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing [C] . Earles, S., Law, . 2004

机译：使用非熔融激光退火在500 eV硼注入的硅中形成超浅结
5. Nonmelt laser annealing of boron implanted silicon. [D] . Earles, Susan Kay. 2002

机译：硼注入硅的非熔融激光退火。
6. The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing [O] . Fu-Ying Lee, Zong-Zhe Wu, Li-Chi Kao, -1

机译：超低能大剂量硼注入Si（110）的化学状态和原子结构演变
7. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans [O] . Sharp, J. A., Cowern, N. E B, Webb, R. P., 2006

机译：多次扫描非熔融激光退火后，预变形硅中超低温硼注入的失活
8. Effect of Thermal Annealing in Boron Implanted, Laser Annealed Silicon [R] . Narayan, J., Larson, B. C., Christie, W. H. 1978

机译：硼离子注入激光退火硅的热退火效应

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

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